Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties

Structural. Electrical and Catalytic Properties of Ion-Implanted Oxides

The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides. PACS: 66.30, 81.40, 81.60, 61.70 Since the introduction of ion implantation as a surface modification technique, the electrical [1, 2], optical [3], magn...

Reliability of Thin Oxides Grown on Deuterium Implanted Silicon Substrate

We have investigated the reliability of gate oxide with deuterium incorporated at the Si/SiO interface through low energy ion implantation into the silicon substrate before thin gate oxide growth. Deuterium implantation at a dose of1 10 /cm at 25 keV showed improved breakdown characteristics. Charge-to-breakdown seems to correlate well with the interface state density measured by conductance me...

Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

Gate Oxides Grown on Deuterium-Implanted Silicon Substrate

Thin oxides (4 nm) grown on deuterium-implanted silicon substrates were investigated for the first time. It was observed that deuterium implantation at a light dose of 1 x 1014/cm2 at 25 keV significantly reduced the leakage current through the oxide. A reduction in electron trap density has also been observed for this oxide. An increase in leakage current, observed for both higher and lower en...

Charge-trapping properties of gate oxide grown on nitrogen-implanted silicon substrate

Charge-trapping properties of ultrathin gate oxide grown on a nitrogen-implanted silicon substrate were investigated using high-field Fowler–Nordheim injection. By applying an empirical model and monitoring threshold voltage shift due to current stress, it was found that both hole trapping and electron trapping are suppressed in the nitrogen-implanted oxide. Smaller trap-generation rate compare...